Tokyo Institute of Technology
Interdisciplinary Graduate School of Science and Engineering
  Introductory AddressInternational Graduate Course  
   

Laboratory Profile

Name of Professor Toshio Kamiya
E-mail Address tkamiya
   (add '@msl.titech.ac.jp' to this address)
About Laboratory http://www.khlab.msl.titech.ac.jp/TopPage-e.html
Members Professors: Hideo Hosono, Satoru Fujitsu
Associate Professor: Toshio Kamiya
Research Associates: Satoru Matsuishi
Others: Doctor researchers and students
Current Research Areas
  • Oxide semiconductor
  • Devices: Thin film transistor, Light-emitting diode, Electron emitter
  • Computer simulation: molecular dynamics, ab-initio 
Recent Major Publications
  • Toshio Kamiya and Hideo Hosono, Material characteristics and applications of transparent amorphous oxide semiconductors; NPG Asia Mater. 2 (2010) 1522.
  • Toshio Kamiya, Kenji Nomura and Hideo Hosono, Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping;  J. Display Technol. 5 (2009) 273.
  • Toshio Kamiya and Masashi Kawasaki, ZnO-Based Semiconductors as Building Blocks for Active Devices; MRS Bulletin 33 (2008) 1061.
  • Toshio Kamiya, Kenji Nomura and Hideo Hosono, Origin of denite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors; Appl. Phys. Lett. 96 (2010) 122103.
  • Kenji Nomura,Toshio Kamiya, Hiromichi Ohta, Masahiro Hirano and Hideo Hosono, Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing;  Appl. Phys. Lett. 93 (2008) 192107.
  • Kosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono, Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor;  Appl. Phys. Lett. 93 (2008) 202107.
  • Kenji Nomura, Akihiro Takagi, Toshio Kamiya, Hiromichi Ohta, Masahiro Hirano and Hideo Hosono: Amorphous Oxide Semiconductors Towards High-Performance Flexible Thin-Film Transistors; Jpn. J. Appl. Phys. 45 (2006) 4303.
  • Kosuke Matsuzaki, Hiroshi Yanagi, and Toshio Kamiya, Hidenori Hiramatsu, Kenji Nomura, and Masahiro Hirano, Hideo Hosono: Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3;  Appl. Phys. Lett. 88 (2006) 092106.
  • Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono: Excitonic blue luminescence from p-LaCuOSe/n-InGaZn5O8 light-emitting diode at room temperature; Appl. Phys. Lett. 87 (2005) 211107.
  • Yoshitake Toda, Sung Wng Kim, Katsuro Hayashi, Masahiro Hirano, Toshio Kamiya and Hideo Hosono, Takeshi Haraguchi and Hiroshi Yasuda: Intense thermal field electron emission from room temperature stable electride; Appl. Phys. Lett. 87 (2005) 254103.
  • T. Kamiya, S. Aiba, M. Miyakawa, K. Nomura, S. Matsuishi, K. Hayashi, K. Ueda, M. Hirano and H. Hosono: Field-Induced Current Modulation in Nanoporous Semiconductor, Electron-Doped 12CaO・7Al2O3; Chem. Mater. 17 (2005) 6311.
  • T. Kamiya, S. Narushima, H. Mizoguchi, K. Shimizu, K. Ueda, H. Ohta, M. Hirano and H. Hosono: Electrical properties and structure of p-type amorphous oxide semiconductor xZnO・Rh2O3; Adv. Funct. Mater. 15 (2005) 968.
  • Kenji Nomura, Hiromichi Ohta, Akihiro Takagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono: Room-Temperature Fabrication of Transparent Flexible Thin Film Transistors Using Amorphous Oxide Semiconductors; Nature 432 (2004) 488.

 

   
 
Tokyo Institute of Technology
Interdisciplinary Graduate School of Science and Engineering

4259 Nagatsuta-cho, Midori-ku, Yokohama, 226-8502, JAPAN

Copyright(c)2005-2010. Tokyo Institute of Technology. All Rights Reserved.
 
Toppage Contact Sitemap Privacy Toppage